IMZ120R030M1H Datasheet - Infineon

IMZ120R030M1H Silicon Carbide MOSFET

IMZ120R030M1H Features

* Very low switching losses

* Threshold-free on state characteristic

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* 0V turn-off gate voltage for easy and simple gate drive

* Fully controllable dV/dt

* Robust body diode for hard commutation

* Temperature independent

Datasheet Details

IMZ120R030M1H

1.24 MB

Silicon carbide mosfet.

📁 Related Datasheet

IMZ120R045M1 1200V SiC Trench MOSFET (Infineon)

IMZ120R060M1H 1200V SiC Trench MOSFET (Infineon)

IMZ120R090M1H 1200V SiC MOSFET (Infineon)

IMZ120R140M1H 1200V SiC MOSFET (Infineon)

IMZ120R220M1H MOSFET (Infineon)

IMZ120R350M1H 1200V SiC MOSFET (Infineon)

IMZ1A General purpose transistor (Rohm)

IMZ2A Dual Transistor (Rohm)

IMZ2A DUAL TRANSISTORS (UTC)

IMZ4 General purpose transistor (Rohm)

TAGS

IMZ120R030M1H Silicon Carbide MOSFET Infineon

Image Gallery

IMZ120R030M1H Distributor