Datasheet4U Logo Datasheet4U.com

IMZ120R030M1H

Silicon Carbide MOSFET

IMZ120R030M1H Features

* Very low switching losses

* Threshold-free on state characteristic

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* 0V turn-off gate voltage for easy and simple gate drive

* Fully controllable dV/dt

* Robust body diode for hard commutation

* Temperature independent

IMZ120R030M1H Datasheet (1.24 MB)

Preview of IMZ120R030M1H PDF

Datasheet Details

Part number:

IMZ120R030M1H

Manufacturer:

Infineon ↗

File Size:

1.24 MB

Description:

Silicon carbide mosfet.

📁 Related Datasheet

IMZ120R045M1 1200V SiC Trench MOSFET (Infineon)

IMZ120R060M1H 1200V SiC Trench MOSFET (Infineon)

IMZ120R220M1H MOSFET (Infineon)

IMZ1A General purpose transistor (Rohm)

IMZ2A Dual Transistor (Rohm)

IMZ2A DUAL TRANSISTORS (UTC)

IMZ4 General purpose transistor (Rohm)

IMZ88 GENERAL PURPOSE DUAL TRANSISTOR (UTC)

IMZA120R014M1H MOSFET (Infineon)

IMZA65R007M2H MOSFET (Infineon)

TAGS

IMZ120R030M1H Silicon Carbide MOSFET Infineon

Image Gallery

IMZ120R030M1H Datasheet Preview Page 2 IMZ120R030M1H Datasheet Preview Page 3

IMZ120R030M1H Distributor