IMZ120R045M1 - 1200V SiC Trench MOSFET
IMZ120R045M1 Features
* Very low switching losses
* Threshold-free on state characteristic
* Wide gate-source voltage range
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage
* Fully controllable dv/dt
* Commutation robust body diode, ready for synchronous rectificat
