IMZ120R045M1 Datasheet - Infineon

IMZ120R045M1 1200V SiC Trench MOSFET

IMZ120R045M1 Features

* Very low switching losses

* Threshold-free on state characteristic

* Wide gate-source voltage range

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* 0V turn-off gate voltage

* Fully controllable dv/dt

* Commutation robust body diode, ready for synchronous rectificat

Datasheet Details

IMZ120R045M1

1.45 MB

1200v sic trench mosfet.

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IMZ120R045M1 IMZ120R045M1 1200V SiC Trench MOSFET Infineon

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