* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qfr
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased
IMZA65R048M1H Datasheet (0.97 MB)
IMZA65R048M1H
0.97 MB
650v mosfet.
Public IMZA65R048M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology devel.
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