IPB017N08N5 Datasheet - Infineon

IPB017N08N5, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPB017N08N5 Data Sheet Rev.2.1 Final Power Manage.
Features. Ideal for high frequency switching and sync. Excellent gate charge x RDS(on) product (FOM). Very low on-res.

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IPB017N08N5-Infineon.pdf

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Datasheet Details

Part number:

IPB017N08N5

Manufacturer:

Infineon ↗

File Size:

1.11 MB

Description:

MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to J

Applications

* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 80 V RDS(on),max 1.7 mΩ ID 120 A Qoss 207 nC QG(0V. .10V) 178 nC OptiMOSª5 Power-Transistor, 80 V IPB017N08N5 D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type / Orde

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