* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to J
IPB017N08N5 Datasheet (1.11 MB)
IPB017N08N5
1.11 MB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPB017N08N5 Data Sheet Rev. 2.1 Final Power Manage.
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