IPB04CN10NG Datasheet, Power-transistor, Infineon

IPB04CN10NG Features

  • Power-transistor R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"[# Product Summary V ;I R  - @ ?>2 I.)     I; )(( K +&1 Z" )(( 7

PDF File Details

Part number:

IPB04CN10NG

Manufacturer:

Infineon ↗

File Size:

874.12kb

Download:

📄 Datasheet

Description:

Power-transistor.

Datasheet Preview: IPB04CN10NG 📥 Download PDF (874.12kb)
Page 2 of IPB04CN10NG Page 3 of IPB04CN10NG

TAGS

IPB04CN10NG
Power-Transistor
Infineon

📁 Related Datasheet

IPB04CN10N - Power-Transistor (Infineon)
IPB04CN10N G IPI04CN10N G IPP04CN10N G %&$ #™2 Power-Transistor Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I \[# AC@ 5F4E ) '.

IPB04CN10NG - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB04CN10NG ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB04CNE8NG - Power-Transistor (Infineon Technologies)
.. IPB04CNE8N G IPP04CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) produ.

IPB040N08NF2S - MOSFET (Infineon)
IPB040N08NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.

IPB041N04N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IPB041N04N - Power Transistor (Infineon)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.

IPB041N04NG - Power-Transistor (Infineon Technologies)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.

IPB042N03L - Power-Transistor (Infineon)
Je]R %&$ #F  % (>.;?6?@<> 7NJ\]ZN[ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B 4@? F6BD6BC Q+ E2 =:7:65 2 44@.

IPB042N03LG - Power-Transistor (Infineon Technologies)
Je]R %&$ #F  % (>.;?6?@<> 7NJ\]ZN[ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B 4@? F6BD6BC Q+ E2 =:7:65 2 44@.

IPB042N10N3G - MOSFET (Infineon Technologies)
IPB042N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts