IPDD60R125G7 Datasheet, Mosfet, Infineon

IPDD60R125G7 Features

• Mosfet
• C7 Gold gives best in class FOM RDS(on)
• Eoss and RDS(on)
• Qg.
• Suitable for hard and soft switching (PFC and high performance LLC)
• C7 Gold te

PDF File Details

Part number:

IPDD60R125G7

Manufacturer:

Infineon ↗

File Size:

1.13MB

Download:

📄 Datasheet

Description:

Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IPDD60R125G7 Application

• Applications according to JEDEC 47/20/22.
• DDPAK SMD package combined with lead free die attach process enables improved thermal performanc

TAGS

IPDD60R125G7

Infineon

📁 Related Datasheet

IPDD60R102G7 - MOSFET (Infineon)
IPDD60R102G7 MOSFET 600V CoolMOS™ G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™.

IPDD60R105CFD7 - MOSFET (Infineon)
IPDD60R105CFD7 MOSFET 600V CoolMOS™ CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordin.

IPDD60R150G7 - MOSFET (Infineon)
IPDD60R150G7 MOSFET 600V CoolMOS™ G7 SJ Power Device The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™ .

IPDD60R190G7 - MOSFET (Infineon)
IPDD60R190G7 MOSFET 600V CoolMOS™ G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™.

IPDD60R045CFD7 - MOSFET (Infineon)
IPDD60R045CFD7 MOSFET 600V CoolMOS™ CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordin.

IPDD60R050G7 - MOSFET (Infineon)
IPDD60R050G7 MOSFET 600V CoolMOS™ G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™.

IPDD60R080G7 - MOSFET (Infineon)
IPDD60R080G7 MOSFET 600V CoolMOS™ G7 SJ Power Device The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™ .

IPD025N06N - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev. 2.5 Final Power Managem.

IPD025N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanch.

IPD029N04NF2S - MOSFET (Infineon)
IPD029N04NF2S MOSFET StrongIRFETTM2 Power-Transistor Features • Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.