Part number:
IPP114N12N3G
Manufacturer:
File Size:
298.68 KB
Description:
Power-transistor.
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; halogen free
* Qualified according
IPP114N12N3G Datasheet (298.68 KB)
IPP114N12N3G
298.68 KB
Power-transistor.
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