IPP110N20N3 - Power-Transistor
IPP110N20N3 Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Quali
