IPP110N20N3 Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Quali
IPP110N20N3G-InfineonTechnologies.pdf
Datasheet Details
IPP110N20N3, IPP110N20N3G
629.24 KB
Power-transistor.
This datasheet PDF includes multiple part numbers: IPP110N20N3, IPP110N20N3G.
Please refer to the document for exact specifications by model.
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IPP110N20N3 Distributor
