IPP111N15N3 - Power-Transistor
IPP111N15N3 Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; Halogen free
