IPP111N15N3G - Power Transistor
IPP111N15N3G Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; Halogen free
* Qualified according to JEDEC1) for target application
