IPP111N15N3G Datasheet - Infineon Technologies

IPP111N15N3G, Power Transistor

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A .

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IPP111N15N3G-InfineonTechnologies.pdf

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Datasheet Details

Part number:

IPP111N15N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

732.59 KB

Description:

Power Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; Halogen free

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IPP111N15N3G Power Transistor Infineon Technologies

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