* Suitable for hard and soft switching (PFC and high performance LLC)
* Increased MOSFET dv/dt ruggedness to 120V/ns
* Increased efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Qualified for industrial
IPP60R040C7 Datasheet (1.84 MB)
IPP60R040C7
1.84 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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600V CoolMOS™ C7 Power Transistor IPP60R040C7
Data Sheet
Rev. 2.0 Final
Power Man.
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