* Increased MOSFET dv/dt ruggedness
* Better efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Easy to use/drive
* Pb-free plating, halogen free mold compound
* Qualified for industrial grade app
IPP65R190C7 Datasheet (1.37 MB)
IPP65R190C7
1.37 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
650V CoolMOS™ C7 Power Transistor IPP65R190C7
Data Sheet
Rev. 2.1 Final
Power Man.
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isc N-Channel MOSFET Transistor
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