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IPT012N06N 60V MOSFET

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Description

IPT012N06N MOSFET OptiMOSTM Power-Transistor, 60 V .

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Features

* 100% avalanche tested
* Superior thermal resistance
* N-channel

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 1.2 mΩ ID 313 A Qoss 119

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