Datasheet Details
- Part number
- IPT012N08N5
- Manufacturer
- Infineon ↗
- File Size
- 1.13 MB
- Datasheet
- IPT012N08N5-Infineon.pdf
- Description
- 80V MOSFET
IPT012N08N5 Description
Public IPT012N08N5 Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V .
1 Maxi.
IPT012N08N5 Features
* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on‑resistance RDS(on)
* N‑channel, normal level
* 100% avalanche tested
* Pb‑free plating; RoHS compliant
* Qualified according to JE
IPT012N08N5 Applications
* Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22 and J‑STD‑020.
Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V. .10V)
Key performance parameters
Value
Unit
80
V
1.2
mΩ
400
A
2
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