IPT012N08N5 Datasheet - Infineon

IPT012N08N5, 80V MOSFET

Public IPT012N08N5 Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V .
1 Maxi.

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Datasheet Details

Part number:

IPT012N08N5

Manufacturer:

Infineon ↗

File Size:

1.13 MB

Description:

80V MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on‑resistance RDS(on)
* N‑channel, normal level
* 100% avalanche tested
* Pb‑free plating; RoHS compliant
* Qualified according to JE

Applications

* Halogen‑free according to IEC61249‑2‑21 Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22 and J‑STD‑020. Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V. .10V) Key performance parameters Value Unit 80 V 1.2 mΩ 400 A 2

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