IPTG029N13NM6

MOSFET

Infineon

IPTG029N13NM6 Features

* N-channel, normal level

* Very low on-resistance RDS(on)

* Excellent gate charge x RDS(on) product (FOM)

* Very low reverse recovery charge (Qrr)

* 100% avalanche tested

* 175°C operating temperature

* Optimized for motor drives and battery p

IPTG029N13NM6 General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IPTG029N13NM6 Datasheet (1.22 MB)