ISC088N08NM6 Datasheet - Infineon

ISC088N08NM6, MOSFET

ISC088N08NM6 MOSFET OptiMOSTM 6 Power-Transistor, 80 V .

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Datasheet Details

Part number:

ISC088N08NM6

Manufacturer:

Infineon ↗

File Size:

1.33 MB

Description:

MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
* Ideal for hig

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 80 V RDS(on),max 8.8 mΩ ID 59 A Qoss 26 nC QG (0V10V) 13.7 nC Qrr (100A/µs) 28 nC Type / Ordering Code ISC088N08NM6 Package PG-TDSON-8 FL TDSON-8 FL (enlarged source interconnection) 8 7 65 1 2 3 4 4 3 2 1 5 6

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