ISZ106N12LM6 MOSFET

Infineon

Description

ISZ106N12LM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .

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Datasheet Specifications

Part number: ISZ106N12LM6
Manufacturer: Infineon ↗
File Size: 1.34 MB
Datasheet: ISZ106N12LM6-Infineon.pdf
Description: MOSFET

Features

* N-channel, logic level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency switc

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 10.6 mΩ ID 62 A Qoss 37 nC QG (0V4.5V) 10.4 nC Qrr (1000A/µs) 106 nC S3O8 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type / Ord

ISZ106N12LM6 Distributors

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ISZ106N12LM6 MOSFET Infineon

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