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ISZ053N08NM6 - MOSFET

ISZ053N08NM6 Description

ISZ053N08NM6 MOSFET OptiMOSTM 6 Power-Transistor, 80 V .

ISZ053N08NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
* Ideal for hig

ISZ053N08NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 80 V RDS(on),max 5.3 mΩ ID 90 A Qoss 41 nC QG (0V10V) 21 nC Qrr (100A/µs) 28 nC Type / Ordering Code ISZ053N08NM6 Package PG-TSDSON-8 FL PG-TSDSON-8 FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate
* 1

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