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K30H603 Datasheet - Infineon

K30H603 IGBT

K30H603 Features

* TRENCHSTOPTM technology offering

* very low VCEsat

* low EMI

* Very soft, fast recovery anti-parallel diode

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

* Pb-free lead plating; RoHS compliant

* co

Datasheet Details

K30H603

1.83 MB

Igbt.

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