* TRENCHSTOPTM technology offering
* very low VCEsat
* low EMI
* Very soft, fast recovery anti-parallel diode
* maximum junction temperature 175°C
* qualified according to JEDEC for target applications
* Pb-free lead plating; RoHS compliant
* co
K40H603
1.83 MB
600v duopack igbt and diode.
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N60H3 600V DuoPack IGBT and Diode H.
📁 Related Datasheet
K40H1203 IKW40N120H3 (Infineon)
K4003 2SK4003 (Toshiba Semiconductor)
K4004-01MR Power MOSFET (Fuji)
K4005-01MR Power MOSFET (Fuji Electric)
K401 Photocoupler (KODENSHI KOREA CORP)
K4012 2SK4012 (Toshiba Semiconductor)
K4013 2SK4013 (Toshiba Semiconductor)
K4017 Silicon N-Channel MOS Type FET (Toshiba Semiconductor)
K402 Photocoupler (KODENSHI KOREA CORP)
K4021 2SK4021 (Toshiba Semiconductor)
