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K40T120 - IGBT

Infineon

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Datasheet Details

Part number	K40T120
Manufacturer	Infineon
File Size	537.02 KB
Description	IGBT
Datasheet	K40T120-Infineon.pdf

K40T120 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 0.041Ω ( Typ. )@ VGS = 10V, ID = 26A.
Low gate charge ( Typ. 49nC).
Low Crss ( Typ. 66pF).
Fast switching.
100% avalanche tested.
Improve dv/dt capability.
RoHS compliant tm.

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Published: Apr 22, 2014 |