K40T120 Datasheet, Igbt, Infineon

K40T120 Features

  • Igbt
  • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A
  • Low gate charge ( Typ. 49nC)
  • Low Crss ( Typ. 66pF)
  • Fast switching
  • 100% avalanche tested <

PDF File Details

Part number:

K40T120

Manufacturer:

Infineon ↗

File Size:

537.02kb

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📄 Datasheet

Description:

Igbt. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

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Page 2 of K40T120 Page 3 of K40T120

TAGS

K40T120
IGBT
Infineon

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onsemi
MOSFET N-CH 200V 52A TO220F
DigiKey
FDPF52N20T
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Unit Price : $0
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