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SIGC128T170R3E Datasheet - Infineon

IGBT

SIGC128T170R3E Features

* 1700V Trench & Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power modules Applications:

* drives Chip Type VCE IC Die Size SIGC128T170R3E 1700V 100A 11.33 x 11.33 m

SIGC128T170R3E General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic types L7787M, L7787T, L7787E; new gate pad des.

SIGC128T170R3E Datasheet (169.68 KB)

Preview of SIGC128T170R3E PDF

Datasheet Details

Part number:

SIGC128T170R3E

Manufacturer:

Infineon ↗

File Size:

169.68 KB

Description:

Igbt.

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