SIGC128T170R3E IGBT

Infineon

Description

SIGC128T170R3E IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

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Datasheet Specifications

Part number: SIGC128T170R3E
Manufacturer: Infineon ↗
File Size: 169.68 KB
Datasheet: SIGC128T170R3E-Infineon.pdf
Description: IGBT

Features

* 1700V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

Applications

* drives Chip Type VCE IC Die Size SIGC128T170R3E 1700V 100A 11.33 x 11.33 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backsid

SIGC128T170R3E Distributors

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SIGC128T170R3E IGBT Infineon

Infineon SIGC128T170R3E-like datasheet