SIGC12T120LE IGBT

Infineon

Description

SIGC12T120LE IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pr.

📥 Download Datasheet

SIGC12T120LE Datasheet Preview — Preview of SIGC12T120LE PDF

Datasheet Specifications

Part number: SIGC12T120LE
Manufacturer: Infineon ↗
File Size: 164.05 KB
Datasheet: SIGC12T120LE-Infineon.pdf
Description: IGBT

Features

* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

Applications

* drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backs

SIGC12T120LE Distributors

📁 Related Datasheet

SIGC12T120L SIGC12T120 SIGC12T60NC SIGC121T120R2C SIGC121T120R2CL SIGC121T120R2CS

📌 All Tags

SIGC12T120LE IGBT Infineon

Infineon SIGC12T120LE-like datasheet