SIGC12T120E IGBT

Infineon

SIGC12T120E Description

SIGC12T120E IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

SIGC12T120E Features

* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

SIGC12T120E Applications

* drives Chip Type SIGC12T120E VCE 1200V IC 8A Die Size 3.54 x 3.5 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal D

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SIGC12T120E Datasheet Preview — Preview of SIGC12T120E PDF

Datasheet Details

Part number: SIGC12T120E
Manufacturer: Infineon ↗
File Size: 163.19 KB
Datasheet: SIGC12T120E-Infineon.pdf
Description: IGBT

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IGBT Infineon

Infineon SIGC12T120E-like datasheet