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SIGC12T120E Datasheet - Infineon

SIGC12T120E IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7621M, L7621T, L7621E Date 06.07.20.

SIGC12T120E Features

* 1200V Trench + Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power modules Applications:

* drives Chip Type SIGC12T120E VCE 1200V IC 8A Die Size 3.54 x 3.5 mm2 C G E

SIGC12T120E Datasheet (163.19 KB)