Datasheet Specifications
- Part number
- SIGC12T120E
- Manufacturer
- Infineon ↗
- File Size
- 163.19 KB
- Datasheet
- SIGC12T120E-Infineon.pdf
- Description
- IGBT
Description
SIGC12T120E IGBT3 Power Chip .Features
* 1200V Trench + Field Stop technologyApplications
* drives Chip Type SIGC12T120E VCE 1200V IC 8A Die Size 3.54 x 3.5 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal DSIGC12T120E Distributors
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