SIGC186T170R3E - IGBT
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic types L7797M, L7797T, L7797E; new gate pad des
SIGC186T170R3E Features
* 1700V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:
* power modules Applications:
* drives Chip Type VCE IC Die Size SIGC186T170R3E 1700V 150A 13.63 x 13.63 m
