SIGC186T170R3E Datasheet - Infineon

SIGC186T170R3E IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic types L7797M, L7797T, L7797E; new gate pad des.

SIGC186T170R3E Features

* 1700V Trench & Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power modules Applications:

* drives Chip Type VCE IC Die Size SIGC186T170R3E 1700V 150A 13.63 x 13.63 m

SIGC186T170R3E-Infineon.pdf