IDH12SG60C - Schottky Diode

Infineon Technologies

IDH12SG60C Description

3rd Generation thinQ!TM SiC Schottky Diode .

IDH12SG60C Features

* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery / No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant

IDH12SG60C Applications

* Breakdown voltage tested at 20mA2)
* Optimized for high temperature operation
* Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C IDH12SG60C 600 V 19 nC 12 A thinQ! 3G Diode designed for fast switching applications like:
* SMPS e. g. ; CCM PFC

📥 Download Datasheet

IDH12SG60C Datasheet Preview — Preview of IDH12SG60C PDF

Datasheet Details

Part number: IDH12SG60C
Manufacturer: Infineon ↗ Technologies
File Size: 565.39 KB
Datasheet: IDH12SG60C_InfineonTechnologies.pdf
Description: Schottky Diode

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Schottky Diode Infineon Technologies

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