ITSN20015P2 Datasheet, Fet, Innogration

✔ ITSN20015P2 Features

High Efficiency and Linear Gain Operations
Integrated ESD Protection
Designed for broadband operation
Excellent ruggedness
Large Positive and Negative Gate/Sour

✔ ITSN20015P2 Application

with frequencies up to 2 GHz. Document Number: ITSN20015P2 Product Datasheet V2.0 ITSN20015P2
Typical Pe

PDF File Details

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Part number:

ITSN20015P2

Manufacturer:

Innogration

File Size:

781.93 KB

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📄 Datasheet

Description:

Rf power ldmos fet. The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain

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ITSN20015P2 Power LDMOS FET Innogration