ITSN20015P2 RF Power LDMOS FET

Innogration

ITSN20015P2 Description

Innogration (Suzhou) Co., Ltd.15W, 12V RF Power LDMOS FETs .
The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

ITSN20015P2 Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Designed for broadband operation
* Excellent ruggedness
* Large Positive and Negative Gate/Source Voltage Range for Improved C

ITSN20015P2 Applications

* with frequencies up to 2 GHz. Document Number: ITSN20015P2 Product Datasheet V2.0 ITSN20015P2
* Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (W) (%) (W) (%) 870 16.4 18 56 22 60
* Typica

📥 Download Datasheet

ITSN20015P2 Datasheet Preview — Preview of ITSN20015P2 PDF

Datasheet Details

Part number: ITSN20015P2
Manufacturer: Innogration
File Size: 781.93 KB
Datasheet: ITSN20015P2-Innogration.pdf
Description: RF Power LDMOS FET

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Power LDMOS FET Innogration

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