ITSN20015P2 Datasheet - Innogration

ITSN20015P2 RF Power LDMOS FET

The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz. Document Number: ITSN20015P2 Product Datasheet V2.0 ITSN20015P2 *Typical Perfor.

ITSN20015P2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Designed for broadband operation

* Excellent ruggedness

* Large Positive and Negative Gate/Source Voltage Range for Improved C

ITSN20015P2 Datasheet (781.93 KB)