MQ1090VP High Power RF LDMOS FET

Innogration

Description

MQ1090VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs .
The MQ1090VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band avionics applications with frequencies 1.

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Datasheet Specifications

Part number: MQ1090VP
Manufacturer: Innogration
File Size: 536.05 KB
Datasheet: MQ1090VP-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Excellent thermal stability, low HCI drift
* Compliant to Restriction of Haza

Applications

* with frequencies 1030/1090MHz. Document Number: MQ1090VP Preliminary Datasheet V1.0 MQ1090VP
* Typical Avionics Performance (on innogration narrow band test fixture with device soldered): Frequency:1030MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (

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