MQ1090VP - High Power RF LDMOS FET

Innogration

MQ1090VP Datasheet Preview — Preview of MQ1090VP PDF

Datasheet Details

Part number	MQ1090VP
Manufacturer	Innogration
File Size	536.05 KB
Description	High Power RF LDMOS FET
Datasheet	MQ1090VP-Innogration.pdf

MQ1090VP Product details

Description

The MQ1090VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band avionics applications with frequencies 1030/1090MHz. Typical Avionics Performance (on innogration narrow band test fixture with device soldered): Frequency:1030MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us 14.5 1100 duty cycle 10% 56 pulse width 50u

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Vol.

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Published: Aug 5, 2018 |