MQ1470VP - High Power RF LDMOS FET

Innogration

MQ1470VP Datasheet Preview — Preview of MQ1470VP PDF

Datasheet Details

Part number	MQ1470VP
Manufacturer	Innogration
File Size	587.85 KB
Description	High Power RF LDMOS FET
Datasheet	MQ1470VP-Innogration.pdf

MQ1470VP Product details

Description

The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 1.2 to 1.4GHz It is featured for high power and high ruggedness. Typical Pulse Performance (on innogration wide band test fixture with device soldered): Vds = 50 V, Idq = 50 mA, TA = 25 C MQ1470VP

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operatin.

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Published: Aug 5, 2018 |