MQ1270VP - High Power RF LDMOS FET

Innogration

MQ1270VP Datasheet Preview — Preview of MQ1270VP PDF

Datasheet Details

Part number	MQ1270VP
Manufacturer	Innogration
File Size	508.70 KB
Description	High Power RF LDMOS FET
Datasheet	MQ1270VP-Innogration.pdf

MQ1270VP Product details

Description

The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. Typical long pulse Performance (on innogration wide band test fixture with device soldered): Pulse width:100uS, duty cycle: 10%, Vds = 50 V, Idq = 100 mA, TA = 25 C Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) IDS(A) Gain(dB) 960 46.5

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Document Number: MQ1270VP Preliminary Datasheet V1.0 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 115 Vdc Gate--.

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Published: Aug 5, 2018 |