IS41C16100S, IS41LV16100S Datasheet - Integrated Silicon Solution

IS41C16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit .

IS41C16100S Features

* Extended Data-Out (EDO) Page Mode access cycle

* TTL compatible inputs and outputs; tristate I/O

* Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms

* JEDEC standard pinout

IS41LV16100S_IntegratedSiliconSolution.pdf

IS41C16100S Datasheet Preview — This datasheet PDF includes multiple part numbers: IS41C16100S, IS41LV16100S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IS41C16100S, IS41LV16100S

Manufacturer:

Integrated Silicon Solution

File Size:

569.28 KB

Description:

1m x 16 (16-mbit) dynamic ram with edo page mode.

Note:

This datasheet PDF includes multiple part numbers: IS41C16100S, IS41LV16100S.
Please refer to the document for exact specifications by model.

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IS41C16100S IS41LV16100S 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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