IS41C16100S - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS41C16100S
Manufacturer	Integrated Silicon Solution
File Size	569.28 KB
Description	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Datasheet	IS41C16100S Datasheet
Note	This datasheet PDF includes multiple part numbers: IS41C16100S, IS41LV16100S. Please refer to the document for exact specifications by model.
Additional preview pages of the IS41C16100S datasheet.

Product details

Description

The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.These devices offer an accelerated cycle access called EDO Page Mode.EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems.These

Features

Extended Data-Out (EDO) Page Mode access cycle.
TTL compatible inputs and outputs; tristate I/O.
Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms.
JEDEC standard pinout.
Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S).
Byte Write and Byte Read operation via two CAS.
Industrail Temperature Range -40°C to 85°C www. DataSheet4U.

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Other Datasheets by Integrated Silicon Solution

IS41C16100 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16105 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
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Published: Apr 22, 2010 |