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IS41C8200 - 2M x 8 (16-MBIT) DYNAMIC RAM

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IS41C8200 Product details

Description

® JUNE 2001 Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: -- 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 5V±10% or 3.3V ± 10% Byte Write and Byte Read operation via two CAS Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memor

Features

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