IS41C85120A 512K x 8 (4-MBIT) DYNAMIC RAM

Integrated Silicon Solution

Description

IS41C85120A IS41LV85120A 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8bit high-performance CMOS Dynamic Random Access Memory.

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Datasheet Specifications

Part number: IS41C85120A
Manufacturer: Integrated Silicon Solution
File Size: 160.77 KB
Datasheet: IS41C85120A_IntegratedSiliconSolution.pdf
Description: 512K x 8 (4-MBIT) DYNAMIC RAM

Features

* TTL compatible inputs and outputs
* Refresh Interval: 1024 cycles/16 ms
* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply 5V ± 10% (IS41C85120A) 3.3V ± 10% (IS41LV85120A)
* Lead-free available

Applications

* The IS41C85120A and IS41LV85120A are available in a 28-pin, 400-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -60 60 15 30 40 110 U

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IS41C85120A 512K 4-MBIT DYNAMIC RAM Integrated Silicon Solution

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