IS41C85120A Datasheet (Integrated Silicon Solution)

IS41C85120A, 512K x 8 (4-MBIT) DYNAMIC RAM

The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8bit high-performance CMOS Dynamic Random Access Memory.

Both products offer accelerated cycle access EDO Page Mode.

EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word.

The Byte Write

IS41C85120A Features

* TTL compatible inputs and outputs

* Refresh Interval: 1024 cycles/16 ms

* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden

* JEDEC standard pinout

* Single power supply 5V ± 10% (IS41C85120A) 3.3V ± 10% (IS41LV85120A)

* Lead-free available