IS43R16320E - 512Mb DDR SDRAM
x8 A0-A12 Row Address Input A0-A9, A11 Column Address Input BA0, BA1 Bank Select Address DQ0 * DQ7 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ7 64 VSSQ
IS43R16320E Features
* VDD and VDDQ: 2.5V ± 0.2V (-5, -6)
* VDD and VDDQ: 2.5V ± 0.1V (-4)
* SSTL_2 compatible I/O
* Double-data rate architecture; two data transfers per clock cycle
* Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturin
