IS43R16160F - 256Mb DDR SDRAM
x8 A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 * DQ7 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ7 64 VSSQ 63 N
IS43R16160F Features
* DEVICE OVERVIEW
* VDD and VDDQ: 2.5V ± 0.2V
* SSTL_2 compatible I/O
* Double-data rate architecture; two data transfers per clock cycle
* Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver
