IS46R32160E, IS43R86400E Datasheet - Integrated Silicon Solution

IS46R32160E - 512Mb DDR SDRAM

x8 A0-A12 Row Address Input A0-A9, A11 Column Address Input BA0, BA1 Bank Select Address DQ0 * DQ7 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ7 64 VSSQ.

IS46R32160E Features

* VDD and VDDQ: 2.5V ± 0.2V (-5, -6)

* VDD and VDDQ: 2.5V ± 0.1V (-4)

* SSTL_2 compatible I/O

* Double-data rate architecture; two data transfers per clock cycle

* Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturin

IS43R86400E-IntegratedSiliconSolution.pdf