IS46R32160E, IS43R86400E Datasheet - Integrated Silicon Solution

IS46R32160E 512Mb DDR SDRAM

x8 A0-A12 Row Address Input A0-A9, A11 Column Address Input BA0, BA1 Bank Select Address DQ0 * DQ7 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ7 64 VSSQ.

IS46R32160E Features

* VDD and VDDQ: 2.5V ± 0.2V (-5, -6)

* VDD and VDDQ: 2.5V ± 0.1V (-4)

* SSTL_2 compatible I/O

* Double-data rate architecture; two data transfers per clock cycle

* Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturin

IS43R86400E-IntegratedSiliconSolution.pdf

IS46R32160E Datasheet Preview — This datasheet PDF includes multiple part numbers: IS46R32160E, IS43R86400E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IS46R32160E, IS43R86400E

Manufacturer:

Integrated Silicon Solution

File Size:

699.72 KB

Description:

512mb ddr sdram.

Note:

This datasheet PDF includes multiple part numbers: IS46R32160E, IS43R86400E.
Please refer to the document for exact specifications by model.

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IS46R32160E IS43R86400E 512Mb DDR SDRAM Integrated Silicon Solution

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