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IS41C16100 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Download the IS41C16100 datasheet PDF. This datasheet also covers the IS41LV16100 variant, as both devices belong to the same 1m x 16 (16-mbit) dynamic ram with edo page mode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS41LV16100_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

Overview

IS41C16100 IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE.

Key Features

  • TTL compatible inputs and outputs; tristate I/O.
  • Refresh Interval:.
  • Auto refresh Mode: 1,024 cycles /16 ms.
  • RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • Self refresh Mode - 1,024 cycles / 128ms.
  • JEDEC standard pinout.
  • Single power supply:.
  • 5V ± 10% (IS41C16100).
  • 3.3V ± 10% (IS41LV16100).
  • Byte Write and Byte Read operation via two CAS.
  • Industrail Temperature Range -40oC to 85oC.
  • Lead-free a.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS41C16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41C16256A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41C16257A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41C4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C44002 4M x 4 (16-MBIT) DYNAMIC RAM
IS41C44004 4M x 4 (16-MBIT) DYNAMIC RAM
IS41C44052 4M x 4 (16-MBIT) DYNAMIC RAM
IS41C44054 4M x 4 (16-MBIT) DYNAMIC RAM
IS41C8200 2M x 8 (16-MBIT) DYNAMIC RAM