IS42S16400 - SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution

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Datasheet Details

Part number: IS42S16400
Manufacturer: Integrated Silicon Solution
File Size: 583.66 KB
Datasheet: IS42S16400_IntegratedSiliconSolution.pdf
Description: SYNCHRONOUS DYNAMIC RAM

IS42S16400 Product details

Description

A0-A11 BA0, BA1 I/O0 to I/O15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM Vcc GND Vcc Q GNDQ NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection This document contains TARGET

Features

Clock frequency: 166, 133, 100 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single 3.3V power supply.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Self refresh modes.
4096 refresh cycles every 64 ms.
Random column address every clock cycle.

📁 Related Datasheet

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SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

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