PJ32 Datasheet - InterFET

PJ32 Silicon Junction Field-Effect Transistor General Purpose Amplifier

F-20 01/99 PJ32 Process Silicon Junction Field-Effect Transistor General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ32 Process. Datasheet 2N5020, 2N5021 2N5460, 2N5461 2N5462 www.DataSheet4U.com At 25°C free air temperature: Stati.

PJ32 Datasheet (149.45 KB)