2N6788 Datasheet - International Rectifier

2N6788 POWER MOSFET

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.426B HEXFET ® JANTX2N6788 POWER MOSFET JANTXV2N6788 [REF:MIL-PRF-19500/555] [GENERIC:IRFF120] N-CHANNEL Product Summary Part Number JANTX2N6788 JANTXV2N6788 BVDSS 100V RDS(on) 0.30Ω ID 6.0A 100 Volt, 0.30Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET tra.

2N6788 Features

* s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current

2N6788_InternationalRectifier.pdf