2N7581U2 POWER MOSFET

International Rectifier

Description

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67164 100 kRads(Si) IRHNA63164 300 kRads(Si) .
IR HiRel R6 S-line technology provides high performance power MOSFETs for space applications.

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Datasheet Specifications

Part number: 2N7581U2
Manufacturer: International Rectifier
File Size: 448.34 KB
Datasheet: 2N7581U2-InternationalRectifier.pdf
Description: POWER MOSFET

Features

* Low RDS(on)
* Fast Switching
* Single Event Effect (SEE) Hardened
* Low Total Gate Charge

Applications

* These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer LET up to 90 (MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high

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2N7581U2 POWER MOSFET International Rectifier

International Rectifier 2N7581U2-like datasheet