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2N7599T3 RADIATION HARDENED POWER MOSFET

2N7599T3 Description

PD-95837B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 2N7599T3 IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiatio.

2N7599T3 Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings

2N7599T3 Applications

* These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s hig

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Datasheet Details

Part number
2N7599T3
Manufacturer
International Rectifier
File Size
191.79 KB
Datasheet
2N7599T3-InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET

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RADIATION HARDENED POWER MOSFET International Rectifier
International Rectifier 2N7599T3-like datasheet