AUIRF7759L2TR Datasheet - International Rectifier

Power MOSFET

AUIRF7759L2TR Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC

AUIRF7759L2TR General Description

The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with exi.

AUIRF7759L2TR Datasheet (254.74 KB)

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Part number:

AUIRF7759L2TR

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International Rectifier

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254.74 KB

Description:

Power mosfet.
AUTOMOTIVE GRADE PD - 96426 AUIRF7759L2TR Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heav.

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AUIRF7759L2TR Power MOSFET International Rectifier

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AUIRF7759L2TR Features

AUIRF7759L2TR General Description

Datasheet Details

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