AUIRF7759L2TR1, AUIRF7759L2TR Datasheet - International Rectifier

AUIRF7759L2TR1 Power MOSFET

The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with exi.

AUTOMOTIVE GRADE PD - 96426 AUIRF7759L2TR Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automot.

AUIRF7759L2TR1 Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC

AUIRF7759L2TR-InternationalRectifier.pdf