Description
PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET® Power MOSFET D .
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to a.
Features
* l l l l l l l l l
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* V(BR)DSS
-55V 0.065Ω
-31A
G S
RDS(on) max. ID
D
D
Applications
* this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an