* Low VCE(on) Trench IGBT Technology Low Switching losses 5 µs Short Circuit Capability Square RBSOA and 100% Clamp IL Tested Tight parameter distribution Lead-Free, RoHS Compliant Automotive qualified Benefits High efficiency in a wide range of applications Suitable for a wide range of switching fre
AUIRGC4066B Datasheet (143.20 KB)
AUIRGC4066B
International Rectifier
143.20 KB
Insulated gate bipolar transistor.
AUTOMOTIVE GRADE AUIRGC4066B Insulated Gate Bipolar Transistor C VCES = 600V IC (Nominal) = 75A tSC 5µs, TJ (max) = 175°C VCE(on) typ = 1.7V @ .
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