AUIRGP4062D-E - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

Infineon

Part number	AUIRGP4062D-E
Manufacturer	Infineon
File Size	554.63 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGP4062D-E Datasheet
Note	This datasheet PDF includes multiple part numbers: AUIRGP4062D-E, AUIRGP4062D. Please refer to the document for exact specifications by model.
Additional preview pages of the AUIRGP4062D-E datasheet.

Low VCE (on) Trench IGBT Technology.
Low Switching Losses.
5µs SCSOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode.
Tighter Distribution of Parameters.
Lead-Free, RoHS Compliant.
Automotive Qualified.
C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V C Benefits.
High Efficiency in a Wide Range of App.

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Published: Dec 16, 2020 |