AUIRG4PC40S-E - Insulated Gate Bipolar Transistor

Product Overview

Infineon

Part number	AUIRG4PC40S-E
Manufacturer	Infineon
File Size	1.22 MB
Description	Insulated Gate Bipolar Transistor
Datasheet	AUIRG4PC40S-E Datasheet
Additional preview pages of the AUIRG4PC40S-E datasheet.

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AD package.
Lead-Free.
Automotive Qualified.
C G E n-channel C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.32V @ VGE = 15V, IC = 31A Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified applic.

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Published: Dec 16, 2020 |