AUIRGP4062D - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

Infineon

Part number	AUIRGP4062D
Manufacturer	Infineon
File Size	554.63 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGP4062D Datasheet
Additional preview pages of the AUIRGP4062D datasheet.

Low VCE (on) Trench IGBT Technology.
Low Switching Losses.
5µs SCSOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode.
Tighter Distribution of Parameters.
Lead-Free, RoHS Compliant.
Automotive Qualified.
C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V C Benefits.
High Efficiency in a Wide Range of App.

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Published: Dec 16, 2020 |