AUIRGPS4067D1 - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

Infineon

Part number	AUIRGPS4067D1
Manufacturer	Infineon
File Size	414.62 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGPS4067D1 Datasheet
Additional preview pages of the AUIRGPS4067D1 datasheet.

Low VCE (on) Trench IGBT Technology.
Low Switching Losses.
6µs SCSOA.
Square RBSOA.
100% of the parts tested for ILM .
Positive VCE (on) Temperature Coefficient.
Soft Recovery Co-pak Diode.
Lead-Free, RoHS Compliant.
Automotive Qualified.
C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ. = 1.70V C Benefits.
High Efficiency in a Wide Range of.

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Published: Apr 11, 2020 |